View IR3527_4599462.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IR3527
DATA SHEET XPHASE3TM DUAL PHASE IC
DESCRIPTION
The IR3527 Dual Phase IC combined with an IR XPhase3 Control IC provides a full featured and flexible way to implement multiphase power solutions. The Control IC provides overall system control and interfaces with any number of IR3527 Phase ICs which each drive and monitor 2 phases of a Synchronous Buck converter. The IR3527 implement an independent power savings function for each power stage and sequential phase timing for use in single output multiphase converters. When power saving mode is enabled, the power stage will disable its output thus eliminating its switching loss while proper converter operation is maintained by the single power stage or in conjunction with other converter power stages. The IR3527 current sense amplifiers remain active when in power savings to support adaptive voltage positioning.
TM
FEATURES
x x x x x x x x x x x x 7V/1.3A gate drivers (2.6A GATEL sink current) Converter output voltage up to 5.1 V (Limited to VCCL-1.4V) Loss-less inductor current sensing Feed-forward voltage mode control Integrated boot-strap synchronous PFET Self-calibration of PWM ramp, current sense amplifier, and current share amplifier Single-wire bidirectional average current sharing Only three external components per phase, plus common decoupling capacitors Power State Indicator (PSI) interface provides the capability to maximize the efficiency at light loads. Debugging function isolates phase from the converter Small thermally enhanced 24L 4 x 4mm MLPQ package RoHS compliant
VIN (12V)
CCS1 RCS1
CCS2
RCS2
22
25
24
23
CSIN2+
21
20 SW2
GATEH2
CSIN1-
CSIN2-
LGND
VCC
19
1
CSIN1+ EAIN ISHARE DACIN PSI1 PHSOUT PSI2 PHSIN GATEH1 BOOST1
BOOST2 VCCL2
18 17 16 15 14 13
CBST2
L2
3 Wire Analog Bus Power Savings Control 3 Wire Digital Phase Timing IC Bias (7V)
2 3 4 5 6
VOUT+
COUT
IR3527 DUAL PHASE IC
GATEL2 PGND GATEL1 VCCL1
VOUT-
CLKIN
L1
SW1
10
11
12
CBST1
7
8
9
CVCCL
CIN
` Figure 1 - IR3527 Application Circuit
Page 1 of 20
V3.0
IR3527
ORDERING INFORMATION
Part Number IR3527MTRPBF * IR3527MPBF * Samples only Package 24 Lead MLPQ (4 x 4 mm body) 24 Lead MLPQ (4 x 4 mm body) Order Quantity 3000 per reel 100 piece strips
PIN DESCRIPTION
PIN# 1 2 3
PIN SYMBOL CSIN1+ EAIN ISHARE
PIN DESCRIPTION Phase1 current sense amplifier non-inverting input and input to debug comparator PWM comparator input from the error amplifier output of Control IC. Body Braking mode is initiated if the voltage on this pin is less than V(DACIN) threshold. Output of the Current Sense Amplifiers are connected to this pin through 3k resistors. Voltage on this pin is equal to approximately V(DACIN) + 16 [(VCSIN1+ - VCSIN1-) + (VCSIN2+ - VCSIN2-)]. Connecting all Phase IC ISHARE pins together creates a share bus which provides an indication of the average current being supplied by all the phases. The signal is used by the Control IC for voltage positioning, over-current protection, and in some cases current reporting. OVP mode is initiated if the voltage on this pin rises above V(VCCL)- 0.8V. Reference voltage input from the Control IC. The Current Sense signal and PWM ramps are referenced to the voltage on this pin. Input to Phase 1 PSI comparator. Logic low stops the phase from switching (low = low power state) Input to Phase 2 PSI comparator. Logic low stops the phase from switching (low = low power state) Phase timing clock input. Phase timing clock output. Clock input. Return for Phase1 high-side driver and reference for GATEL1 non-overlap comparator. Phase1 High-side driver output and input to GATEL1 non-overlap comparator. Supply for Phase1 high-side driver. Internal bootstrap synchronous PFET is connected between this pin and the VCCL1 pin. Supply for Phase1 low-side driver. Internal bootstrap synchronous PFET is connected from this pin to the BOOST1 pin. Phase1 Low-side driver output and input to GATEH1 non-overlap comparator. Return for low side drivers and reference for GATEH non-overlap comparators. Phase2 Low-side driver output and input to GATEH2 non-overlap comparator. Supply for Phase2 low-side driver. Internal bootstrap synchronous PFET is connected from this pin to the BOOST pin. Supply for Phase2 high-side driver. Internal bootstrap synchronous PFET is connected between this pin and the VCCL1 pin. V3.0
4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
DACIN PSI1 PSI2 PHSIN PHSOUT CLKIN SW1 GATEH1 BOOST1 VCCL1 GATEL1 PGND GATEL2 VCCL2 BOOST2
Page 2 of 20
IR3527
19 20 21 22 23 24 25 GATEH2 SW2 VCC CSIN2+ CSIN2CSIN1LGND Phase2 High-side driver output and input to GATEL2 non-overlap comparator. Return for Phase2 high-side driver and reference for GATEL2 non-overlap comparator. Supply for internal IC circuits. Input to PWM feed-forward. Phase2 current sense amplifier non-inverting input and input to debug comparator Phase2 current sense amplifier inverting input Phase1 current sense amplifier inverting input Ground for internal IC circuits. IC substrate is connected to this pin.
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed below may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. All voltages are absolute voltages referenced to the LGND pin. Operating Junction Temperature................. 0 to 150 C o o Storage Temperature Range......................-65 C to 150 C MSL Rating.............................................2 o Reflow Temperature..................................260 C
o
PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
PIN NAME CSIN1+ EAIN ISHARE DACIN PSI1 PSI2 PHSIN PHSOUT CLKIN SW1 GATEH1 BOOST1 VCCL1 GATEL1 PGND GATEL2 VCCL2 BOOST2
VMAX 8V 8V 8V 3.3V 8V 8V 8V 8V 8V 34V 40V 40V 8V 8V 0.3V 8V 8V 40V
VMIN -0.3V -0.3V -0.3V -0.3V -0.3V -0.3V -0.3V -0.3V -0.3V -0.3V DC, -5V for 100ns -0.3V DC, -5V for 100ns -0.3V -0.3V -0.3V DC, -5V for 100ns -0.3V -0.3V DC, -5V for 100ns -0.3V -0.3V
ISOURCE 1mA 1mA 1mA 1mA 1mA 1mA 1mA 2mA 1mA 3A for 100ns, 100mA DC 3A for 100ns, 100mA DC 1A for 100ns, 100mA DC n/a 5A for 100ns, 200mA DC 5A for 100ns, 200mA DC 5A for 100ns, 200mA DC n/a 1A for 100ns, 100mA DC
ISINK 1mA 1mA 1mA 1mA 1mA 1mA 1mA 2mA 1mA n/a 3A for 100ns, 100mA DC 3A for 100ns, 100mA DC 5A for 100ns, 200mA DC 5A for 100ns, 200mA DC n/a 5A for 100ns, 200mA DC 5A for 100ns, 200mA DC 3A for 100ns, 100mA DC V3.0
Page 3 of 20
IR3527
19 20 21 22 23 24 25 GATEH2 SW2 VCC CSIN2+ CSIN2CSIN1LGND 40V 34V 34V 8V 8V 8V n/a -0.3V DC, -5V for 100ns -0.3V DC, -5V for 100ns -0.3V -0.3V -0.3V -0.3V n/a 3A for 100ns, 100mA DC 3A for 100ns, 100mA DC n/a 1mA 1mA 1mA n/a 3A for 100ns, 100mA DC n/a 20mA 1mA 1mA 1mA n/a
Note: 1. Maximum GATEHx - SWx = 8V 2. Maximum BOOSTx - GATEHx = 8V
RECOMMENDED OPERATING CONDITIONS FOR RELIABLE OPERATION WITH MARGIN
8.0V VCC 28V, 4.75V VCCL 7.5V, 0 C TJ 125 C
o o
ELECTRICAL CHARACTERISTICS
The electrical characteristics involve the spread of values guaranteed within the recommended operating conditions. Typical values represent the median values, which are related to 25 0.5V 9'$&,1 9, 500kHz &/.,1 C. 9MHz, 250kHz 3+6,1 0+] CGATEH = 3.3nF, CGATEL = 6.8nF (unless otherwise specified). PARAMETER Gate Drivers GATEHx Source Resistance GATEHx Sink Resistance GATELx Source Resistance GATELx Sink Resistance GATEHx Source Current GATEHx Sink Current GATELx Source Current GATELx Sink Current GATEHx Rise Time GATEHx Fall Time GATELx Rise Time GATELx Fall Time TEST CONDITION BOOSTx - SWx = 7V. Note 1 BOOSTx - SWx = 7V. Note 1 VCCLx - PGND = 7V. Note 1 VCCLx - PGND = 7V. Note 1 BOOSTx=7V, GATEHx=2.5V, SW=0V. Note 1 BOOSTx=7V, GATEHx=2.5V, SWx=0V. Note 1 VCCLx=7V, GATELx=2.5V, PGND=0V. Note 1 VCCLx=7V, GATELx=2.5V, PGND=0V. Note 1 BOOSTx - SWx = 7V, measure 1V to 4V transition time BOOSTx - SWx = 7V, measure 4V to 1V transition time VCCLx - PGND = 7V, Measure 1V to 4V transition time VCCLx - PGND = 7V, Measure 4V to 1V transition time MIN TYP 1.3 1.3 1.3 0.5 1.3 1.3 1.3 2.6 6 6 12 6 13 13 26 13 MAX 3.3 3.3 3.3 1.3 UNIT A A A A ns ns ns ns
Page 4 of 20
V3.0
IR3527
PARAMETER GATELx low to GATEHx high delay GATEHx low to GATELx high delay Disable Pull-Down Resistance Clock & Daisy Chain CLKIN Threshold CLKIN Bias Current CLKIN Phase Delay PHSIN Threshold PHSOUT Propagation Delay PHSIN Pull-Down Resistance PHSOUT High Voltage PHSOUT Low Voltage PWM Comparators PWM Ramp Slope EAIN Bias Current Minimum Pulse Width Minimum GATEHx Turn-off Time OVP Comparator OVP Threshold Propagation Delay Body Brake Comparator Threshold Voltage with EAIN falling. Threshold Voltage with EAIN rising. Hysteresis Propagation Delay Measured relative to PWM Ramp Floor Voltage Measured relative to PWM Ramp Floor Voltage VCCLx = 5V. Measure time from EAIN < V(DACIN) (200mV overdrive) to GATELx transition to < 4V. -340 -240 70 40 -235 -135 105 65 -130 -30 130 90 mV mV mV ns Vin=12V 0 EAIN 3V Note 1 20 Step V(ISHARE) up until GATELx drives high. Compare to V(VCCLx) V(VCCLx)=5V, Step V(ISHARE) up from V(DACIN) to V(VCCLx). Measure time to V(GATELx)>4V. -1.0 15 42 -5 52.5 -0.3 65 80 -0.8 40 57 5 75 160 -0.4 70 mV/ %DC PA ns ns V ns TEST CONDITION BOOSTx = VCCLx = 7V, SWx = PGND = 0V, measure time from GATELx falling to 1V to GATEHx rising to 1V BOOSTx = VCCLx = 7V, SWx = PGND = 0V, measure time from GATEHx falling to 1V to GATELx rising to 1V Note 1 MIN 10 10 30 TYP 20 20 80 MAX 40 40 130 UNIT ns ns N
Compare to V(VCCLx) CLKIN = V(VCCLx) Measure time from CLKIN<1V to GATEHx>1V Compare to V(VCCLx) Measure time from CLKIN > (VCCLx*50%) o to PHSOUT>(VCCLx*50%). 10pF@125 C
40 -0.5 40 35 4 30
45 0.0 75 50 15 100 0.6 0.4
57 0.5 125 55 35 170
PA ns % ns N V
%
I(PHSOUT) = -5mA, measure VCCLx - PHSOUT I(PHSOUT) = 5mA
2
2
V
Page 5 of 20
V3.0
IR3527
Current Sense Amplifiers CSINx+/- Bias Current CSINx+/- Bias Current Mismatch Input Offset Voltage Gain Unity Gain Bandwidth Slew Rate Differential Input Range Differential Input Range Common Mode Input Range o Rout at TJ = 25 C Rout at TJ = 125 C ISHARE Source Current ISHARE Sink Current Share Adjust Amplifiers Input Offset Voltage Gain Unity Gain Bandwidth PWM Ramp Floor Voltage Note 1 CSINx+ = CSINx- = DACIN. Note 1 -3 3.6 4 -116 120 -220 0 4.7 8.5 0 180 -160 3 5.8 17 +116 240 -100 mV V/V kHz mV mV
o
-200 Note 1 CSINx+ = CSINx- = DACIN. Measure input referred offset from DACIN 0.5V 9'$&,1 9 C(ISHARE)=10pF. Measure at ISHARE. Note 1 Note 1 0.8V 9'$&,1 9 1RWH Note 1 Note 1 0.5V 9'$&,1 0.8V, Note 1 -50 -1 30 4.8
0 0
200 50 1
nA nA mV V/V MHz V/Ps mV mV V k k mA mA
32.5 6.8 6
35 8.8
-10 -5 0 2.3 3.6 .5 .5 3.0 4.7 1.7 1.7
50 50 Note2 3.7 5.4 2.9 2.9
ISHARE unconnected Measured Relative to DACIN Maximum PWM Ramp ISHARE = DACIN - 200mV Floor Voltage Measured relative to FLOOR with ISHARE unconnected Minimum PWM Ramp Floor ISHARE = DACIN + 200mV Voltage Measured relative to FLOOR with ISHARE unconnected Synchronous Rectification Disable Comparators The ratio of V(CSINx-) / V(DACIN), below which V(GATELx) is always low. Negative Current Comparators Input Offset Voltage Propagation Delay Time Bootstrap Diodes Forward Voltage Debug Comparators Threshold Voltage Compare to V(VCCLx) I(BOOSTx) = 30mA, VCCL=6.5V Note 1 Apply step voltage to V(CSINx+) - V(CSINx-). Measure time to V(GATELx)< 1V. Threshold Voltage
mV
66
75
86
%
-16 100 360 -250
0 200 520 -150
16 400 960 -50
mV ns mV mV
Page 6 of 20
V3.0
IR3527
PARAMETER PSI Comparator Rising Threshold Voltage Falling Threshold Voltage Hysteresis Resistance Floating Voltage General VCC Supply Current VCC Supply Current VCCLx Supply Current BOOSTx Supply Current DACIN Bias Current SW Floating Voltage TEST CONDITION MIN 520 400 50 200 800 8V99&&9 10V99&&9 4.75V 9(BOOSTx)-V(SWX) 8V 2.2 2.2 3.1 0.5 -3.0 0.1 TYP 620 550 70 500 MAX 700 650 120 850 1150 12.2 8.0 12.1 3 1 0.4 UNIT mV mV mV N mV mA mA mA mA PA V
8.0 4.0 8.0 1.5 -1.5 0.3
Note 1: Guaranteed by design, but not tested in production Note 2: VCCL-0.5V or VCC - 2.5V, whichever is lower
SYSTEM THEORY OF OPERATION
PWM Control Method The PWM block diagram of the XPhase3 architecture is shown in Figure 2. Feed-forward voltage mode control with trailing edge modulation is used. A high-gain and wide-bandwidth voltage type error amplifier is used for the voltage control loop. Input voltage is sensed by phase to monitor any changes in amplitude. The PWM ramp slope will change with the input voltage and automatically compensate for changes in the input voltage. The input voltage can change due to variations in the silver box output voltage or due to the wire and PCB-trace voltage drop related to changes in load current. Frequency and Phase Timing Control The oscillator is located in the Control IC and the system clock frequency is programmable from 250 kHz to 9 MHZ by an external resistor. The control IC system clock signal (CLKOUT) is connected to CLKIN of all the phase ICs. The phase timing of the phase ICs is controlled by the daisy chain loop, where control IC phase clock output (PHSOUT) is connected to the phase clock input (PHSIN) of the first phase IC, and PHSOUT of the first phase IC is connected to PHSIN of the second phase IC, etc. and PHSOUT of the last phase IC is connected back to PHSIN of the control IC. The switching frequency is set by the Control IC. The clock frequency equals the total number of phases multiplied by the switching frequency. During power up, the control IC sends out clock signals from both CLKOUT and PHSOUT pins and detects the feedback at PHSIN pin to determine the phase number and monitor any fault in the daisy chain loop. The IR3527 combines 2 Phase ICs in a single package. IR3527 internally connect the PHSOUT1 pin to the PHSIN2 so the firing order is always sequential. Figure 3 shows the phase timing for a four phase converter implemented by two IR3527 Phase ICs. The dotted lines indicate the PHSOUT1 to PHSIN2 waveform that would be internal to the IR3527.
TM
Page 7 of 20
V3.0
IR3527
CONTROL IC
CLOCK GENERATOR CLKOUT PHSOUT PHSIN PWM COMPARATOR GATE DRIVE VOLTAGE PHSIN1 PHSOUT1 CLKIN
CLK Q D D R Q
VIN
DUAL PHASE IC
PWM LATCH1
RESET DOMINANT
BOOST1 GATEH1 SW1
COUT CBST
VOSNS+ VOUT
CLK Q
EAIN VCC
+
VCCL1 GND GATEL1
BODY BRAKING COMPARATOR
+ + + -
VDAC
+ -
RCOMP CCOMP1 CCOMP RFB1 RFB
DACIN PHSIN2 PHSOUT2
+
FB
RVSETPT
CFB
RDRP1 RDRP CDRP CLK Q D
PWM LATCH2
RESET DOMINANT
D Q R
IVSETPT
IROSC
+ -
VDRP AMP
VSETPT VDRP
CLK Q
IIN
PWM COMPARATOR
+
ENABLE
VID6
RAMP DISCHARGE CLAMP SHARE ADJUST ERROR AMPLIFIER
+
BODY BRAKING COMPARATOR
+ -
-
VID6 VID6
+
3K
CURRENT SENSE AMPLIFIER
-
VID6 VID6 +
+
CONTROL BUS TO ADDITIONAL PHASES
Figure 2 - PWM Block Diagram
Control IC CLKOUT (Phase IC CLKIN) Control IC PHSOUT & IR3527 IC #1 PHSIN1 IR3527 IC #1 Phase 1 PWM Latch SET IR3527 IC #1 PHSOUT1 & PHSIN2 IR3527 IC #1 PHSOUT2 & IC #2 PHSIN1 IR3527 IC #2 PHSOUT1 & PHSIN2 IR3527 IC #2 PHSOUT2 & Control IC PHSIN
Figure 3 - Four Phase Oscillator Waveforms implemented with two IR3527 Page 8 of 20 V3.0
-
VID6 VID6 +
+
EAOUT
3K
+
-
ERROR AMPLIFIER
+
-
+
-
+ -
REMOTE SENSE AMPLIFIER
ENABLE
VID6 VO VDAC LGND ISHARE
SHARE ADJUST ERROR AMPLIFIER RAMP DISCHARGE CLAMP
PGND
VOSNS-
-
VID6 VID6
+
CURRENT SENSE AMPLIFIER
CSIN1+
CCS RCS
CSIN1-
BOOST2 GATEH2 SW2 VCCL2 GATEL2
CBST
CSIN2+
CCS RCS
CSIN2POWER BUS TO ADDITIONAL PHASES
IR3527
PWM Operation The PWM comparator is located in the phase IC. Upon receiving the falling edge of a clock pulse, the PWM latch is sets and the PWM ramp voltage begins to increase. In conjunction, the low side driver is turned off and the high side driver is turned on after the non-overlap time expires. When the PWM ramp voltage exceeds the error amplifier's output voltage, the PWM latch is reset. This turns off the high side driver, turns on the low side driver after the non-overlap time, and activates the ramp discharge clamp. The clamp drives the PWM ramp voltage to the level set by the share adjust amplifier until the next clock pulse. The PWM latch is reset dominant allowing all phases to go to zero duty cycle within a few tens of nanoseconds in response to a load step decrease. Phases can overlap and go to a 100% duty cycle in response to a load step increase with turn-on gated by the clock pulses. An error amplifier output voltage greater than the common mode input range of the PWM comparator results in 100% duty cycle regardless of the voltage of the PWM ramp. This arrangement guarantees the error amplifier is always in control and can demand 0 to 100% duty cycle as required. It also favors response to a load step decrease which is appropriate given the low output to input voltage ratio of most systems. The inductor current will increase much more rapidly than decrease in response to load transients. An additional advantage of this PWM modulator is that differences in ground or input voltage at the phases have no effect on operation since the PWM ramps are referenced to VDAC. Figure 4 depicts PWM operating waveforms under various conditions.
PHASE IC CLOCK PULSE
EAIN PWMRMP VDAC
GATEH
GATEL
STEADY-STATE OPERATION
DUTY CYCLE INCREASE DUE TO LOAD INCREASE
DUTY CYCLE DECREASE DUE TO VIN INCREASE (FEED-FORWARD)
DUTY CYCLE DECREASE DUE TO LOAD DECREASE (BODY BRAKING) OR FAULT (VCCLUV, OCP, VID=11111X)
STEADY-STATE OPERATION
Figure 4 - PWM Operating Waveforms Body Braking
TM
In a conventional synchronous buck converter, the minimum time required to reduce the current in the inductor in response to a load step decrease is; L * ( I MAX I MIN ) TSLEW VO The slew rate of the inductor current can be significantly increased by turning off the synchronous rectifier in response to a load step decrease. The switch node voltage is then forced to decrease until conduction of the synchronous rectifier's body diode occurs. This increases the voltage across the inductor from Vout to Vout + VBODYDIODE. The minimum time required to reduce the current in the inductor in response to a load transient decrease is now;
TSLEW L * ( I MAX I MIN ) VO VBODYDIODE
Page 9 of 20
V3.0
IR3527
Since the voltage drop in the body diode is often comparable to the output voltage, the inductor current slew rate can be increased significantly. This patented technique is referred to as "body braking" and is accomplished through the "body braking comparator" located in the phase IC. If the error amplifier's output voltage drops below the output voltage of the share adjust amplifier in the phase IC, this comparator turns off the low side gate driver. Lossless Average Inductor Current Sensing Inductor current can be sensed by connecting a series resistor and a capacitor network in parallel with the inductor and measuring the voltage across the capacitor, as shown in Figure 5. The equation of the sensing network is,
vC ( s ) vL ( s ) 1 1 sRCS CCS iL ( s ) RL sL 1 sRCS CCS
Usually the resistor Rcs and capacitor Ccs are chosen so that the time constant of Rcs and Ccs equals the time constant of the inductor which is the inductance L over the inductor DCR (RL). If the two time constants match, the voltage across Ccs is proportional to the current through L, and the sense circuit can be treated as if only a sense resistor with the value of RL was used. The mismatch of the time constants does not affect the measurement of inductor DC current, but affects the AC component of the inductor current. vL iL L RCS
Current Sense Amp
RL CCS
c vCS
VO CO
CSOUT Figure 5 - Inductor Current Sensing and Current Sense Amplifier The advantage of sensing the inductor current versus high side or low side sensing is that actual output current being delivered to the load is obtained rather than peak or sampled information about the switch currents. The output voltage can be positioned to meet a load line based on real time information. Except for a sense resistor in series with the inductor, this is the only sense method that can support a single cycle transient response. Other methods provide no information during either load increase (low side sensing) or load decrease (high side sensing). An additional problem associated with peak or valley current mode control for voltage positioning is that they suffer from peak-to-average errors. These errors will show in many ways but one example is the effect of frequency variation. If the frequency of a particular unit is 10% low, the peak to peak inductor current will be 10% larger and the output impedance of the converter will drop by about 10%. Variations in inductance, current sense amplifier bandwidth, PWM prop delay, any added slope compensation, input voltage, and output voltage are all additional sources of peak-to-average errors. Current Sense Amplifier A high speed differential current sense amplifier is located in the phase IC, as shown in Figure 5. Its gain is nominally 32.5 and the 3850 ppm/C increase in inductor DCR should be compensated in the voltage loop feedback path. The current sense amplifier can accept positive differential input up to 50mV and negative up to -10mV before clipping. The output of the current sense amplifier is summed with the DAC voltage and sent to the control IC and other phases through an on-chip 3K UHVLVWRU FRQQHFWHG WR WKH ,6+$5( SLQ 7KH ,6+$5( SLQV RI DOO WKH SKDVHV DUH tied together and the voltage on the share bus represents the average current through all the inductors and is used Page 10 of 20 V3.0
IR3527
by the control IC for voltage positioning and current limit protection. The input offset of this amplifier is calibrated to +/- 1mV in order to reduce the current sense error. The input offset voltage is the primary source of error for the current share loop. In order to achieve very small input offset error and superior current sharing performance, the current sense amplifier continuously calibrates itself. This calibration algorithm creates ripple on ISHARE bus with a frequency of fsw/(32*28) in a multiphase architecture. Average Current Share Loop Current sharing between phases of the converter is achieved by the average current share loop in each phase IC. The output of the current sense amplifier is compared with the average current at the share bus. If current in a phase is smaller than the average current, the share adjust amplifier of the phase will pull down the starting point of the PWM ramp thereby increasing its duty cycle and output current; if current in a phase is larger than the average current, the share adjust amplifier of the phase will pull up the starting point of the PWM ramp thereby decreasing its duty cycle and output current. The current share amplifier is internally compensated so that the crossover frequency of the current share loop is much slower than that of the voltage loop and the two loops do not interact.
IR3527 THEORY OF OPERATION
Block Diagram A detailed IR3527 block diagram is enclosed (Figure 6) to help clearly illustrate the following theory of operation. Tri-State Gate Drivers The gate drivers can deliver up to 1.3A peak current (2.6A sink current for bottom driver). An adaptive non-overlap circuit monitors the voltage on the GATEH and GATEL pins to prevent MOSFET shoot-through current while minimizing body diode conduction. The non-overlap latch is added to eliminate the error triggering caused by the switching noise. An enable signal is provided by the control IC to the phase IC without the addition of a dedicated signal line. The error amplifier output of the control IC drives low in response to any fault condition such as VCCL TM under voltage or output overload. The IR3527 Body Braking comparator detects this and drives both gate outputs low. This tri-state operation prevents negative inductor current and negative output voltage during power-down. A synchronous rectification disable comparator is used to detect converter CSIN- pin voltage, which represents local converter output voltage. If the voltage is below 75% of VDAC and negative current is detected, GATEL drives low, which disables synchronous rectification and eliminates negative current during power-up. The gate drivers pull low if the supply voltages are below the normal operating range. An 80k UHVLVWRU LV FRQQHFWHG across the GATEH/GATEL and PGND pins to prevent the GATEH/GATEL voltage from rising due to leakage or other causes under these conditions.
Page 11 of 20
V3.0
IR3527
CLKIN PHSIN
100% DUTY PWM_CLK1LATCH PWMQ1
CLK Q D 1 CLK Q D
Q1_100%DUTY
+
RMPOUT 200mV GATEH DRIVER
PWM LATCH S
D Q R
BOOST1 GATEH1 SW
Q1_100%DUT Y PWM_CLK1
PWMQ1
RESET DOMINANT
CLK Q
EAIN
EAIN +
2 3
4
GATEH NONOVERLAP LATCH
Q S
GATEH NONOVERLAP COMPARATOR
+
VCCL PWM RESET PWM RAMP GENERATOR
PWM COMPARATOR RMPOUT PHSIN
SET R DOMINANT
VCC
VCC CALIBRATION DACIN-SHARE_ADJ
Q R
D CLK
GATEL NONOVERLAP LATCH
Q S
1V
GATEL NONOVERLAP COMPARATOR
1V
+
+
EAIN
100mV DACIN + SHARE_ADJ 200mV
+
-
OVP COMPARATOR
+
NEGATIVE CURRENT LATCH
VCCL 0.8V
Q RESET DOMINANT
R S
-
CURRENT SENSE AMPLIFIER
X32.5 +
3K
CSAOUT
DEBUG COMPARATOR
+
+
DACIN IROSC
DACIN
CALIBRATION
+
X 0.75
CALIBRATION 1V
IROSC
Q R D CLK
PSI COMPARATOR
+
VCCL
8CLK Q R D CLK
VCCL
610mV 510mV
CLK Q D
Q2_100%DUTY
+
RMPOUT 200mV GATEH DRIVER
PWM_CLK2 PWMQ2
S
100% DUTY LATCH Q2_100%DUT Y
CLK Q D 1 EAIN + 2 3 4
PWM LATCH
D R Q
PWMQ2 GATEH NONOVERLAP LATCH
Q S
PWM_CLK2
CLK Q RESET DOMINANT
GATEH NONOVERLAP COMPARATOR
+
VCCL
PWM COMPARATOR RMPOUT PHSIN VCC CALIBRATION DACIN-SHARE_ADJ
PWM RESET PWM RAMP GENERATOR
SET R DOMINANT
Q R
D CLK
GATEL NONOVERLAP LATCH
Q S
1V
GATEL NONOVERLAP COMPARATOR
1V
+ -
BODY BRAKING COMPARATOR
EAIN
ANTI-BIAS LATCH
SET R DOMINANT
100mV DACIN + SHARE_ADJ 200mV
+
NEGATIVE CURRENT LATCH
GATEL DRIVER
-
Q
R S
0.15V
+
DEBUG OFF (LOW=OPEN) SHARE ADJUST AMPLIFIER
RESET DOMINANT
-
CURRENT SENSE AMPLIFIER CSAOUT
DEBUG COMPARATOR
3K
+
+ IROSC +
X32.5 +
CALIBRATION
CALIBRATION
1V
IROSC
Q R D CLK
PSI COMPARATOR
+
VCCL
8CLK Q R D CLK
VCCL
610mV 510mV
Figure 6 - IR3527 Block diagram Page 12 of 20 V3.0
-
NEGATIVE CURRENT COMPARATOR
-
ISHARE
SHARE ADJUST AMPLIFIER
+
NEGATIVE CURRENT COMPARATOR
-
+
DEBUG OFF (LOW=OPEN)
SYNCHRONOUS RECTIFICATION DISABLE COMPARATOR
-
BODY BRAKING COMPARATOR
ANTI-BIAS LATCH
SET R DOMINANT
GATEL DRIVER
VCCL1 GATEL1 PGND
0.15V
CSIN1CSIN1+
+ -
500K
PSI1
PHSOUT
BOOST2 GATEH2 SW2
VCCL2 GATEL2
CSIN2CSIN2+
500K
PSI2 LGND
IR3527
Over Voltage Protection (OVP) The IR3527 includes over-voltage protection that turns on the low side MOSFET to protect the load in the event of a shorted high-side MOSFET, converter out of regulation, or connection of the converter output to an excessive output voltage. As shown in Figure 7, if ISHARE pin voltage is above V(VCCL) - 0.8V, which represents overvoltage condition detected by control IC, the over-voltage latch is set. GATEL drives high and GATEH drives low. The OVP circuit overrides the normal PWM operation and within approximately 150ns will fully turn-on the low side MOSFET, which remains ON until ISHARE drops below V(VCCL) - 0.8V when over voltage ends. The over voltage fault is latched in control IC and can only be reset by cycling the power to control IC. The error amplifier output (EAIN) is pulled down by control IC and will remain low. The lower MOSFETs alone can not clamp the output voltage however an SCR or N-MOSFET could be triggered with the OVP output to prevent load damage.
OUTPUT VOLTAGE (VO)
OVP THRESHOLD
VCCL-800 mV
ISHARE(IIN)
GATEH
GATEL
FAULT LATCH (CONTROL IC) ERROR AMPLIFIER INPUT (EAIN)
VDAC
NORMAL OPERATION
OVP CONDITION
AFTER OVP
Figure 7 - Over-voltage protection waveforms PWM Ramp Every time the phase IC is powered up PWM ramp magnitude is calibrated to generate a 52.5 mV/%DC (typical) ramp for a VCC=12V. For example, for a 15% duty ratio the ramp amplitude is 787.5mV for VCC=12V. Feedforward control is achieved because the PWM ramp varies with VCC voltage proportionally after calibration. Debugging Mode If CSIN+ pin is pulled up to VCCL voltage, IR3527 enters into debugging mode. Both drivers are pulled low and ISHARE output is disconnected from the current share bus, which isolates this phase IC from other phases. However, the phase timing from PHSIN to PHSOUT does not change.
Page 13 of 20
V3.0
IR3527
Emulated Bootstrap Diode IR3527 integrates a PFET to emulate the bootstrap diode. An external bootstrap diode connected from VCCL pin to BOOST pin can be added to reduce the drop across the PFET but is not needed in most applications. PSI Mode In order to increases the efficiency under light load condition, the IR3527 employs a power state indicator (PSI) signal to switch off the phase IC at light load. An active low on the PSI indicates the low power state and can be used to switch off the phase IC. Once the PSI signal is asserted, the IR3527 waits for 8 PHSIN cycles to disable the gate drives. When the PSI signal is de-asserted again the anti-bias latch circuit ensures that the topFET is switched on first. The maximum de-assert delay is determined by the CLKIN period. Operation at Higher Output Voltage The proper operation of the phase IC is ensured for output voltage up to 5.1V. Similarly, the minimum VCC for proper operation of the phase IC is 8 V. If the condition [VCCL 9DACIN + 35(VCSIN+x -VCSIN-x) + 1.4V] is violated, the current sharing performance of the phase IC is affected.
APPLICATIONS INFORMATION
IR3527 EXTERNAL COMPONENTS Inductor Current Sensing Capacitor CCS and Resistor RCS The DC resistance of the inductor is utilized to sense the inductor current. Usually the resistor RCS and capacitor CCS in parallel with the inductor are chosen to match the time constant of the inductor, and therefore the voltage across the capacitor CCS represents the inductor current. If the two time constants are not the same, the AC component of the capacitor voltage is different from that of the real inductor current. The time constant mismatch does not affect the average current sharing among the multiple phases, but does affect the current signal ISHARE as well as the output voltage during the load current transient if adaptive voltage positioning is adopted. Measure the inductance L and the inductor DC resistance RL. Pre-select the capacitor CCS and calculate RCS as follows. L RL (1) RCS C CS Bootstrap Capacitor CBST Depending on the duty cycle and gate drive current of the phase IC, a capacitor in the range of 0.1uF to 1uF is needed for the bootstrap circuit. Decoupling Capacitors for Phase IC A 0.1uF-1uF decoupling capacitor is required at the VCCL pin. CURRENT SHARE LOOP COMPENSATION The internal compensation of current share loop ensures that crossover frequency of the current share loop is at least one decade lower than that of the voltage loop so that the interaction between the two loops is eliminated. The crossover frequency of current share loop is approximately 8 kHz. Page 14 of 20 V3.0
IR3527
IC Die Temperature To ensure proper operation, the IC die should never operate at or above 150 For the vast majority of C. applications, the IR3527 dual phase IC will not require any type of heat sink to achieve temperatures well below 150 The IR3527 die is housed in a 24 lead MLPQ with exposed pad (Epad) which will provide C. excellent thermal conduction. By soldering the Epad to a minimal copper area of 1"x 1", the internal die temperature will rise at a rate of approximately 30.5&: JA). The die temperature can be derived by first calculating the power dissipation of the phase IC. The IC has two types of conduction losses: quiescent current and driver losses. The quiescent losses are made up of VCC, VCCL, and boost (VBST) supplies, while driving the top and bottom FETs contribute to the second loss. The IC quiescent power losses can be calculated by the following equations: Pvccl 2Vccl u Ivccl , Pvcc Vcc u Ivcc, and Pbst 2(Vbst u Ibst ) . Ivccl, Ivcc, and Ibst are the input supplies quiescent currents which are listed in the Electrical Specifications Table. Driver power losses (PTOP and PBOT) are equal to QG x VG x Fo, where QG is the FET's gate charge, VG is the gate voltage, and Fo is the operational frequency. Both top and bottom FET power losses needs to be calculated and doubled to account for both internal drivers. Hence, the total phase IC power loss (PTOTAL) is: PVCCL + PVCC + PBST + 2(PTOP) + 2(PBOT). The die temperature can now be calculated with the following formula:
TDIE
Where, TA is the ambient temperature and package.
JA
is the junction to air thermal impedance of the 24 pin MLPQ
T JA u PTOTAL TA ,
Page 15 of 20
V3.0
IR3527
LAYOUT GUIDELINES
The following layout guidelines are recommended to reduce the parasitic inductance and resistance of the PCB layout; therefore, minimizing the noise coupled to the IC. x Separate analog bus (EAIN, DACIN, and IOUT) from digital bus (CLKIN, PSI, PHSIN, and PHSOUT) to reduce the noise coupling. x Place current sense resistors and capacitors (RCS and CCS) close to phase IC. Use Kelvin connection for the inductor current sense wires, but separate the two wires by ground polygon. The wire from the inductor terminal to CSIN- should not cross over the fast transition nodes, i.e., switching nodes, gate drive outputs, and bootstrap nodes. x Place the decoupling capacitors CVCC and CVCCL as close as possible to VCC and VCCL pins of the phase IC respectively. x Place the phase IC as close as possible to the MOSFETs to reduce the parasitic resistance and inductance of the gate drive paths. x Place the input ceramic capacitors close to the drain of top MOSFET and the source of bottom MOSFET. Use combination of different packages of ceramic capacitors. x There are four switching power loops. Two loops include the input capacitors, top MOSFET, inductor, output capacitors and the load; two other loops consist of bottom MOSFET, inductor, output capacitors and the load. Route the switching power paths using wide and short traces or polygons; use multiple vias for connections between layers.
Figure 8 - Layout Guidelines for IR3527 Page 16 of 20 V3.0
IR3527
PCB Metal and Component Placement x Lead land width should be equal to nominal part lead width. The minimum lead to lead spacing should be PP WR SUHYHQW shorting. x Lead land length should be equal to maximum part lead length + 0.3 mm outboard extension + 0.05mm inboard extension. The outboard extension ensures a large and inspectable toe fillet, and the inboard extension will accommodate any part misalignment and ensure a fillet. x Center pad land length and width should be equal to maximum part pad length and width. However, the minimum metal to metal spacing should be PP IRU R] &RSSHU PP IRU R] &RSSHU DQG 0.23mm for 3 oz. Copper) x Nine 0.3mm diameter vias shall be placed in the pad land spaced at 0.94 mm center to center, and connected to ground to minimize the noise effect on the IC and to transfer heat to the PCB. x No pcb traces should be routed nor Vias placed under any of the 4 corners of the IC package. Doing so can cause the IC to raise up from the pcb resulting in poor solder joints to the IC leads.
Page 17 of 20
V3.0
IR3527
Solder Resist x The solder resist should be pulled away from the metal lead lands and center pad by a minimum of 0.06mm. The solder resist mis-alignment is a maximum of 0.05mm and it is recommended that the lead lands are all Non Solder Mask Defined (NSMD). Therefore, pulling the S/R 0.06mm will always ensure NSMD pads. x The minimum solder resist width is 0.13mm. At the inside corner of the solder resist where the lead land groups meet, it is recommended to provide a fillet so a solder resist width of PP UHPDLQV x Ensure that the solder resist in-between the lead lands and the pad land is Pm due to the high aspect ratio of the solder resist strip separating the lead lands from the pad land. x The 9 vias in the land pad should be tented with solder resist 0.4mm diameter, or 0.1mm larger than the diameter of the via.
Page 18 of 20
V3.0
IR3527
Stencil Design x The stencil apertures for the lead lands should be approximately 80% of the area of the lead lands. Reducing the amount of solder deposited will minimize the occurrence of lead shorts. Since for 0.5mm pitch devices the leads are only 0.25mm wide, the stencil apertures should not be made narrower; openings in stencils < 0.25mm wide are difficult to maintain repeatable solder release. x The stencil lead land apertures should therefore be shortened in length by 80% and centered on the lead land. x The land pad aperture should be 4 square openings of 1.1 mm sides and spaced at 0.2 mm to deposit approximately 76% area of solder on the center pad. If too much solder is deposited on the center pad the part will float and the lead lands will be open. x The maximum length and width of the land pad stencil aperture should be equal to the solder resist opening minus an annular 0.2mm pull back to decrease the incidence of shorting the center land to the lead lands when the part is pushed into the solder paste.
Page 19 of 20
V3.0
IR3527
PACKAGE INFORMATION 24L MLPQ (4 x 4 mm Body) -
JA
= 30.5oC/w
JC
= 1.8oC/W
Data and specifications subject to change without notice. This product will be designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.
Page 20 of 20
V3.0

▲Up To Search▲

Price & Availability of IR3527

	To Download IR3527 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .